Methods and systems for low interfacial oxide contact between barrier and copper metallization

ABSTRACT

The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

CROSS-REFERENCE

This is a continuation application of U.S. patent application Ser. No.11/641,361, filed Dec. 18, 2006 which is related to U.S. PatentApplication Docket #XCR-001, titled “METHODS AND SYSTEMS FOR BARRIERLAYER SURFACE PASSIVATION,” to Yezdi DORDI, John BOYD, Fritz REDEKER,William THIE, Tiruchirapalli ARUNAGIRI, and Alex YOON, filed Dec. 18,2006; U.S. patent application Ser. No. 11/382,906, filed May 25, 2006;U.S. patent application Ser. No. 11/427,266, filed Jun. 28, 2006; U.S.patent application Ser. No. 11/461,415, filed Jul. 27, 2006; U.S. patentapplication Ser. No. 11/514,038, filed Aug. 30, 2006; U.S. patentapplication Ser. No. 10/357,664, filed Feb. 3, 2003; U.S. patentapplication Ser. No. 10/879,263, filed Jun. 28, 2004; and U.S. patentapplication Ser. No. 10/607,611, filed Jun. 27, 2003; all of thesepatents and/or applications are incorporated herein, in their entirety,by this reference.

BACKGROUND

This invention relates to improved methods and systems for themetallization of semiconductor devices such as integrated circuits,memory cells, and the like that use copper metallization; morespecifically this invention relates to methods and systems forcopper-based metallization of silicon integrated circuits.

An important part of the fabrication of semiconductor devices is themetallization of the devices to electrically interconnect the deviceelements. For many such devices, the metallization of choice includesthe use of copper metal lines. Metallization systems that use coppermetal lines also must use a barrier material to isolate the copper fromcopper sensitive areas of the electronic devices. Some of the barrierlayers of interest for copper metallization are materials such astantalum and such as tantalum nitride. The usual fabrication process formetallization systems that use copper involves the deposition of copperonto the barrier layers. A preferred process for depositing the copperonto the barrier layer is electroless copper deposition.

One problem that occurs in the standard technology used for coppermetallization is that many of the preferred barrier materials such astantalum and tantalum nitride, if exposed to air for extended periods oftime, can form oxides such as tantalum oxide and tantalum oxynitride onthe surface of the barrier layer. It is known that electrolessdeposition of copper onto the barrier layer is inhibited if there isoxide present on the barrier layer. In addition, copper does not adhereto the oxide on the barrier layer as well as it adheres to the purebarrier metal or metal rich barrier layer surface, such as tantalum andtantalum-rich surface on tantalum nitride. Tantalum and/or tantalumnitride barrier layers are only presented here as examples; similarproblems occur for other barrier layer materials. The poor adhesion cannegatively affect the electro-migration performance of the semiconductordevices. In addition, the formation of tantalum oxide or tantalumoxynitride on the barrier layer surface can increase the resistivity ofthe barrier layer. More specifically, the presence of the oxide betweenthe barrier layer and the composite copper can reduce the performancefor the electronic devices and reduce the reliability of the electronicdevices fabricated using standard copper metallization technology.

Clearly, there are numerous applications requiring high-performance highreliability electronic devices. The problems that occur for the standardtechnology for fabricating electronic devices using copper metallizationindicate there is a need for methods and systems that can allow thefabrication of electronic devices using copper metallization withimproved performance and improved reliability.

SUMMARY

This invention pertains to methods and systems for fabricatingsemiconductor devices. The present invention seeks to overcome one ormore of the deficiencies of the standard technologies for fabricatingsemiconductor devices such as integrated circuits, memory cells, and thelike that use copper metallization.

One aspect of the present invention is a method of depositing a gapfillcopper layer onto a transition metal barrier layer or transition metalcompound barrier layer for integrated circuit metallization so as toproduce a substantially oxygen free interface therebetween. In oneembodiment, the method comprises providing a substantially oxide freesurface of the barrier layer. The method also includes depositing anamount of atomic layer deposition (ALD) copper on the oxide free surfaceof the barrier layer effective to prevent oxidation of the barrierlayer. The method further includes depositing a gapfill copper layerover the ALD copper.

Another aspect of the present invention is a system for depositing acopper layer onto a transition metal barrier layer or transition metalcompound barrier layer for electronic device metallization so as toproduce a substantially oxygen-free interface therebetween. In oneembodiment, the integrated system comprises at least one barrierdeposition module configured to form a barrier layer on a substrate. Thesystem also comprises an ALD copper deposition module configured todeposit copper by atomic layer deposition. The system further includes acopper gapfill module and at least one transfer module coupled to the atleast one barrier deposition module and to the ALD copper depositionmodule. The transfer module is configured so that the substrate can betransferred between the modules substantially without exposure to anoxide-forming environment.

It is to be understood that the invention is not limited in itsapplication to the details of construction and to the arrangements ofthe components set forth in the following description or illustrated inthe drawings. The invention is capable of other embodiments and of beingpracticed and carried out in various ways. In addition, it is to beunderstood that the phraseology and terminology employed herein are forthe purpose of description and should not be regarded as limiting.

As such, those skilled in the art will appreciate that the conception,upon which this disclosure is based, may readily be utilized as a basisfor the designing of other structures, methods, and systems for carryingout aspects of the present invention. It is important, therefore, thatthe claims be regarded as including such equivalent constructionsinsofar as they do not depart from the spirit and scope of the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a process flow diagram of an embodiment of the presentinvention.

FIG. 2 is a process flow diagram of an embodiment of the presentinvention.

FIG. 3 is a diagram of an embodiment of the present invention.

FIG. 4 is a diagram of an embodiment of the present invention.

FIG. 5 is a diagram of an embodiment of the present invention.

FIG. 6 is a diagram of an embodiment of the present invention.

FIG. 7 is a diagram of an embodiment of the present invention.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.For example, the dimensions of some of the elements in the figures maybe exaggerated relative to other elements to help to improveunderstanding of embodiments of the present invention.

DESCRIPTION

The present invention pertains to metallization for semiconductordevices using barrier layers and copper lines. The operation ofembodiments of the present invention will be discussed below, primarily,in the context of transition metal barrier layers or transition metalcompound barrier layers and copper metal lines for silicon integratedcircuits. However, it is to be understood that embodiments in accordancewith the present invention may be used for other metallization systemsfor which a substantially oxygen free interface between the barrierlayer and metal is needed.

In the following description of the figures, identical referencenumerals have been used when designating substantially identicalelements or steps that are common to the figures.

Reference is now made to FIG. 1 where there is shown a process flowdiagram 20 according to one embodiment of the present invention. Processflow diagram 20 shows a method of depositing a gapfill copper layer ontoa transition metal barrier layer or transition metal compound barrierlayer for integrated circuit metallization so as to produce asubstantially oxygen free interface between the barrier layer and thecopper layer. Process flow diagram 20 includes step 25, step 30, andstep 35. Step 25 includes formation of a substantially oxide freesurface of a barrier layer on a substrate. Step 30 includes depositionof an ALD copper layer onto the substantially oxide free surface of thebarrier layer. The ALD copper layer is deposited so as to be effectiveto substantially prevent oxidation of the barrier layer. Step 35includes deposition of the gapfill copper layer. Process flow 20 iscarried out so that there is substantially no oxide present between thebarrier layer and the ALD copper layer. Consequently, the gapfill copperlayer is deposited on a substantially oxide-free barrier layer.

Numerous embodiments of the present invention can be obtained as aresult of selecting various options for carrying out the steps shown inprocess flow diagram 20. Step 25 can be performed with a variety ofprocesses such as physical vapor deposition, chemical vapor deposition,and atomic layer deposition. A variety of materials or materials systemscan be used for the barrier layer formed in step 25. The materialselected for the barrier layer will be a factor influencing theselection of the process used for forming the barrier layer. In apreferred embodiment of the present invention, step 25 involvesformation of a barrier layer that includes a transition metal or atransition metal compound. For copper metallization systems, preferredbarrier layer materials for embodiments of the present invention aretantalum, tantalum nitride, or a combination of the two. Tantalum andtantalum nitride can be deposited by physical vapor depositionprocesses. However for preferred embodiments of the present invention,step 25 uses atomic layer deposition to deposit tantalum nitride barrierlayers.

A further step (not shown in FIG. 1) that is optional for someembodiments of the present invention includes treating the surface ofthe barrier layer after the barrier has been formed. Treating thesurface of the barrier layer may be performed in a variety of ways. Thestep is performed so as to prepare the surface of the barrier layer forfollow-on processing steps. Treating the surface of the barrier layer isprimarily done to improve the surface adhesion or improve the contactresistance for layers deposited on the barrier layer. According to oneembodiment of the present invention, treating surface of the barrierlayer is accomplished by subjecting the surface of the barrier layer toa hydrogen containing plasma. The hydrogen containing plasma may beconfigured to remove contaminants on the surface of the barrier layersuch as to decompose metal oxides formed on the surface of the barrierlayer so as to produce a metal rich surface at the surface of thebarrier layer. An example of a suitable hydrogen containing plasma fortreating the surface of the barrier layer is described in commonly ownedU.S. patent application Ser. No. 11/514,038, filed on Aug. 30, 2006 andis incorporated herein in its entirety by this reference.

As another option, treating the surface of the barrier may includeenriching the surface of the barrier layer with a metal such as bydepositing the metal onto the surface of the barrier layer. As anoption, a process such as a physical vapor deposition process can beused to enrich the surface of the barrier layer with the metal. Apreferred method for embodiments of the present invention for treatingthe surface of the barrier includes depositing a metal using a plasmaimplantation process to incorporate the metal with the surface of thebarrier layer. Preferably, the step of treating the barrier layersurface is performed either as part of step 25 or at another point inthe process prior to the deposition of the ALD copper layer. A preferredmetal to use to enrich the surface of the barrier layer is a transitionmetal such as tantalum. It is to be understood that treatment of thebarrier layer surface is not required for all embodiments of the presentinvention.

The general process of atomic layer deposition of copper is well knownin the art. There are multiple processes to choose from for thedeposition of ALD copper layer for step 30. As stated above, the ALDcopper layer for preferred embodiments of the present invention isdeposited so as to be effective to substantially prevent oxidation ofthe barrier layer surface. More specifically, this means that the ALDcopper layer is deposited so as to substantially prevent oxidation ofthe barrier layer during the deposition of the ALD copper layer. Thisalso means that the ALD copper layer is deposited so as to have asuitable combination of thickness and microstructure properties so thatdiffusion of oxide forming species to the surface of the barrier layersubstantially does not occur for follow-on processing. In other words,the ALD copper layer is deposited to act as oxidation protection for thebarrier layer. For one embodiment of the present invention, the ALDcopper layer has a thickness of about 1 nm to about 2 nm. According to apreferred embodiment of the present invention, the ALD copper layer hasa thickness sufficient to prevent oxidation of the underlying barrierlayer, and the ALD copper layer has a thickness sufficient so that theALD copper layer can be used as a copper seed layer for electrochemicalplating a copper gapfill layer.

For a preferred embodiment of the present invention, the ALD copperlayer is deposited using deposition chemistries that do not includeelements or compounds that form a metal oxide with the metal at thebarrier layer surface. Exemplary process chemistries for deposition ofthe ALD copper layer use a precursor copper compound such as(N,N′-diisopropylacetamidinato)copper(1) and such as(N,N′-di-sec-butylacetamidinato)copper(1). Both of these compounds arecommercially available from suppliers such as Sigma-Aldrich Corp., St.Louis, Mo. Other examples of suitable process chemistries for the ALDcopper deposition are copper(II)(tmhd)₂(tmhd=tetramethyl-3,5-heptanedionate) and copper(I) 1,3-diketiminates.

A variety of processes and process conditions can be used for step 35 ofprocess flow 20. As an option for step 35, electroless deposition can beused to deposit the gapfill copper layer onto the ALD copper layerformed in step 30. In a preferred embodiment, the ALD copper layerformed in step 30 is sufficiently thick to act as a copper seed layerand step 35 includes the deposition of an electroplated copper gapfilllayer on the ALD copper layer formed in step 30. Electroless copperdeposition and electrochemical plating process are well-known wetprocesses.

In yet another embodiment of the present invention, process flow 20further comprises storing the substrate with the ALD copper layer on thebarrier layer for an amount of time or transporting the substrate withthe ALD copper layer on the barrier layer to a preparation module forpreparing the substrate for depositing the gapfill copper layer. Thisembodiment of the present invention is suitable if the ALD copper layeris capable of protecting the underlying barrier layer from oxideformation during transporting or during storing for which thetransporting step or storing are for a long period of time or occur inenvironmental conditions other than those in a vacuum transfer module orcontrolled environment transfer module. More particularly, thisembodiment of the present invention uses an ALD copper layer that canprevent substantial oxide formation on the underlying barrier layer forextended periods of time or exposure to process conditions that may ormay not cause oxide formation, absent the ALD copper layer. In otherwords, one embodiment of the present invention includes process flow 20in which the ALD copper layer is configured to prevent substantial oxideformation for the barrier layer for transporting or storing the barrierlayer with the ALD copper layer in an oxygen containing environment.

Reference is now made to FIG. 2 where there is shown a process flowdiagram 22 according to one embodiment of the present invention. Processflow diagram 22 shows a method of depositing a gapfill copper layer ontoa transition metal barrier layer or transition metal compound barrierlayer for integrated circuit metallization so as to produce asubstantially oxygen free interface between the barrier layer and thecopper layer. Process flow diagram 22 includes step 25, step 30, step33, and step 35. Step 25 includes formation of a substantially oxidefree surface of a barrier layer on a substrate. Step 30 includesdeposition of an ALD copper layer onto the substantially oxide freesurface of the barrier layer. The ALD copper layer is deposited so as tobe effective for substantially preventing oxidation of the barrierlayer. Step 33 includes electroless deposition of a copper seed layeronto the ALD copper layer. Step 35 includes deposition of the gapfillcopper layer. Process flow 20 is carried out so that there issubstantially no oxide present between the barrier layer and the ALDcopper layer. Consequently, the copper layer is deposited on anoxide-free surface of the barrier layer.

Numerous embodiments of the present invention can be obtained as aresult of selecting various options for the steps shown in process flowdiagram 22. Step 25 can be performed using a variety of processes suchas physical vapor deposition, chemical vapor deposition, and atomiclayer deposition. A variety of materials or materials systems can beused for the barrier layer formed in step 25. The material selected forthe barrier layer will be a factor influencing the selection of theprocess used for forming the barrier layer. In a preferred embodiment ofthe present invention, step 25 involves formation of a barrier layerthat includes a transition metal or a transition metal compound. Forcopper metallization systems, preferred barrier layer materials forembodiments of the present invention are tantalum, tantalum nitride, ora combination of the two. Tantalum and tantalum nitride can be depositedby physical vapor deposition processes. However for preferredembodiments of the present invention, step 25 uses atomic layerdeposition to deposit tantalum nitride barrier layers.

A further step (not shown in FIG. 2) that is optional for someembodiments of the present invention includes treating the surface ofthe barrier layer after the barrier has been formed. Treating thesurface of the barrier layer may be performed in a variety of ways. Thestep is performed so as to prepare the surface of the barrier layer forfollow-on processing steps. Treating the surface of the barrier layer isprimarily directed to improve the surface adhesion or improve thecontact resistance for layers deposited on the barrier layer. Accordingto one embodiment of the present invention, treating surface of thebarrier layer includes subjecting the surface of the barrier layer to ahydrogen containing plasma. The hydrogen containing plasma may beconfigured to remove contaminants on the surface of the barrier layersuch as to decompose metal oxides formed on the surface of the barrierlayer so as to produce a metal rich surface at the surface of thebarrier layer.

As another option, treating the surface of the barrier may includeenriching the surface of the barrier layer with a metal such as bydepositing the metal onto the surface of the barrier layer. As anoption, a process such as a physical vapor deposition process can beused to enrich the surface of the barrier layer with the metal. Apreferred method for embodiments of the present invention for treatingthe surface of the barrier includes depositing a metal using a plasmaimplantation process to incorporate the metal with the surface of thebarrier layer. Preferably, treating the barrier layer surface isperformed either as part of step 25 or at another point in the processprior to the deposition of the ALD copper layer. A preferred metal touse to enrich the surface of the barrier layer is a transition metalsuch as tantalum. It is to be understood that treating the barrier layersurface is not a required step for all embodiments of the presentinvention.

The general process of atomic layer deposition of copper is well knownin the art. There are multiple processes to choose from for thedeposition of ALD copper layer for step 30. As stated above, the ALDcopper layer for preferred embodiments of the present invention isdeposited so as to be effective to substantially prevent oxidation ofthe barrier layer surface. More specifically, this means that the ALDcopper layer is deposited so as to substantially prevent oxidation ofthe barrier layer during the deposition of the ALD copper layer. Thisalso means that the ALD copper layer is deposited so as to have asuitable combination of thickness and microstructure properties so thatdiffusion of oxide forming species to the surface of the barrier layersubstantially does not occur for follow-on processing. In other words,the ALD copper layer is deposited to act as oxidation protection for thebarrier layer. For one embodiment of the present invention, the ALDcopper layer has a thickness of about 1 nm to about 2 nm.

For a preferred embodiment of the present invention, the ALD copperlayer is deposited using deposition chemistries that do not includeelements or compounds that form a metal oxide with the metal at thebarrier layer surface. Exemplary process chemistries for deposition ofthe ALD copper layer use a precursor copper compound such as(N,N′-diisopropylacetamidinato)copper(1) and such as(N,N′-di-sec-butylacetamidinato)copper(1).

Step 33 includes electroless deposition of a copper seed layer onto theALD copper layer. The inclusion of step 33 in process flow 22 isnecessary for embodiments of the present invention where the ALD copperlayer may not be suitable for use as a seed layer for the deposition ofthe copper gapfill layer. Preferably, step 35 includes deposition of anelectroplated copper gapfill layer on the copper seed layer formed instep 33. In other words, a preferred embodiment of the present inventionincludes deposition of an ALD copper layer so that it is sufficient toprevent oxidation of the underlying barrier layer. The ALD copper layerdeposition is followed by deposition of a copper seed layer so that theamount of copper present is sufficient to allow deposition of anelectroplated copper gapfill layer.

In yet another embodiment of the present invention, process flow 22further comprises storing the substrate with the ALD copper layer on thebarrier layer for an amount of time, transporting the substrate with theALD copper layer on the barrier layer to a preparation module to preparethe substrate for deposition of the gapfill copper layer or both. Thisembodiment of the present invention is suitable if the ALD copper layeris capable of protecting the underlying barrier layer from oxideformation during transporting or during storing for which thetransporting step or storing step are for a long period of time or occurin environmental conditions other than those in a vacuum transfer moduleor controlled environment transfer module. More particularly, thisembodiment of the present invention uses an ALD copper layer thatprevents substantial oxide formation for the underlying barrier layerfor extended periods of time or exposure to process conditions that mayor may not cause oxide formation. In other words, one embodiment of thepresent invention includes process flow 22 in which the ALD copper layeris configured to prevent substantial oxide formation of the barrierlayer for transporting or storing the barrier layer with the ALD copperlayer in an oxygen containing environment.

Reference is now made to FIG. 3 where there is shown a schematic diagramof an exemplary integrated system 50, according to one embodiment of thepresent invention, for depositing a copper layer onto a transition metalbarrier layer or transition metal compound barrier layer on asubstrates(s) for integrated circuit metallization. Integrated system 50is configured so as to produce a substantially oxygen free interfacebetween the barrier layer and the copper layer. A preferred embodimentof integrated system 50 is configured to substantially perform the stepsof process flow 20 (FIG. 1) and variations thereof or the steps ofprocess flow 22 (FIG. 2) and variations thereof.

For the embodiment shown in FIG. 3, integrated system 50 comprises atleast one transfer module 52, a barrier deposition module 58, a barriertreatment module 60, an ALD copper deposition module 62, and a coppergapfill module 65. Integrated system 50 is configured so that it allowsminimal exposure of the substrate surface to oxygen at critical stepsfor which oxide formation is undesirable. In addition, since it is anintegrated system, the substrate can be transferred from one processmodule immediately to the next station, which limits the duration ofexposed to oxygen.

According to one embodiment of the present invention, integrated system50 is configured to process a substrate(s) through the entire processsequence of process flow 20 of FIG. 1 and variations thereof. Morespecifically, barrier deposition module 58 is configured to form abarrier layer on a substrate. Preferably, barrier deposition module 58is configured deposit a barrier layer material such as tantalum,tantalum nitride, and combinations of the two. As an option, barrierdeposition module 58 can be configured for physical vapor deposition ofthe barrier layer or atomic layer deposition of the barrier layer. In apreferred embodiment, barrier deposition module 58 is configured foratomic layer deposition. In one possible configuration, barrierdeposition module 58 is configured for an atomic layer depositionprocess operated at less than 1 Torr. As another option, barrierdeposition module 58 is configured for atomic layer deposition for ahigh-pressure process using supercritical CO2 and organometallicprecursors to form the barrier layer. In yet another configuration,barrier deposition module 58 is configured for a physical vapordeposition process operating at pressures less than 1 Torr. Details ofan exemplary reactor for a high pressure process using supercritical CO2is described in commonly assigned application Ser. No. 10/357,664,titled “Method and Apparatus for Semiconductor Wafer Cleaning UsingHigh-Frequency Acoustic Energy with Supercritical Fluid”, filed on Feb.3, 2003, which is in incorporated herein by this reference. Once thebarrier layer is formed, the substrate should be transferred in acontrolled-ambient environment to limit exposure to oxygen; this isaccomplished with transfer module 52.

Barrier treatment module 60 is configured to treat the surface of thebarrier layer after formation of the barrier layer. More specifically,barrier treatment module 60 is configured so as to prepare the surfaceof the barrier layer for follow-on processing steps. Primarily, barriertreatment module 113 is configured to improve the surface adhesion or toimprove the contact resistance for layers deposited on the barrierlayer. According to one embodiment of the present invention, barriertreatment module 60 includes a plasma chamber configured to subject thesurface of the barrier layer to a hydrogen containing plasma so as toremove contaminants on the surface of the barrier layer or decomposedmetal oxides formed on the surface of the barrier layer so as to producea metal rich surface at the surface of the barrier layer. As anotheroption, barrier treatment module 113 is configured to enrich the surfaceof the barrier layer with a metal such as by depositing the metal ontothe surface of the barrier layer. In a preferred configuration, barriertreatment module 113 includes a plasma chamber configured for plasmaimplantation of a metal. The implanted metal is incorporated with thesurface of the barrier layer to produce a metal rich surface for thebarrier layer. Preferably the surface of the barrier layer is enrichedwith a transition metal. For applications using tantalum or tantalumnitride for the barrier layer, barrier treatment module 60 is preferablyconfigured to enrich the surface of the barrier layer surface withtantalum.

ALD copper deposition module 65 is configured to deposit an ALD copperlayer under conditions that do not substantially cause oxide formationon a substantially oxide free barrier layer surface or metal enrichedbarrier layer surface. ALD copper deposition module 65 is configured todeposit a copper layer that is effective for substantially preventingoxidation of the barrier layer surface. More specifically, this meansthat ALD copper deposition module 65 is configured to deposit a copperlayer so as to substantially prevent oxidation of the barrier layerduring the deposition of the ALD copper layer. ALD copper depositionmodule 65 is configured to deposit an ALD copper layer that has asuitable combination of thickness and microstructure properties so thatdiffusion of oxide forming species to the surface of the barrier layersubstantially does not occur for follow-on process conditions.

For a preferred embodiment of the present invention, ALD copperdeposition module 65 is configured to use chemistries that do notinclude elements or compounds that form a metal oxide with the metal atthe barrier layer surface. Exemplary ALD copper deposition processchemistries for which ALD copper deposition module 65 is configuredinclude, but not limited to, ALD copper deposition from a precursorcopper compound such as (N,N′-diisopropylacetamidinato)copper(1) and ALDcopper deposition from a precursor copper compound such as(N,N′-di-sec-butylacetamidinato)copper(1).

Copper gapfill module 65 is configured to deposit a gapfill copperlayer. Optionally copper gapfill module 65 can be configured to depositthe gapfill copper layer using electroless deposition, electrochemicalplating, or electroless deposition and electrochemical plating. Morespecifically, copper gapfill module 65 may be configured to deposit aconformal copper seed layer on the barrier surface, followed by a thickcopper gapfill (or bulk fill) process. In one embodiment, copper gapfillmodule 65 is configured to perform an electroless process to produce aconformal copper seed layer. Copper gapfill module 65 can be furtherconfigured for a thick copper bulk fill process by an electrolessdeposition process or an electrochemical plating process. Electrolesscopper deposition and electrochemical plating process are well-known wetprocesses. For a wet process to be integrated in a system withcontrolled processing and transporting environment, which has beendescribed above, the reactor needs to be integrated with a rinse/dryerto enable dry-in/dry-out process capability. In addition, the systemneeds to be filled with inert gas to ensure minimal exposure of thesubstrate to oxygen. Further, all fluids used in the process arede-gassed, i.e. dissolved oxygen is removed by commercially availabledegassing systems.

The environment for electroless deposition also needs to be controlledto provide low (or limited) levels of oxygen and moisture (water vapor).Inert gas can also be used in copper gapfill module 65 to ensure lowlevels of oxygen are in the processing environment. Copper gapfillmodule 65 can be configured to perform the electroless depositionprocess in a number of ways, such as puddle-plating, where fluid isdispensed onto a substrate and allowed to react in a static mode, afterwhich the reactants are removed and discarded, or reclaimed. In anotherembodiment, copper gapfill module 65 includes a proximity process headto limit the electroless process liquid so that it is only in contactwith the substrate surface on a limited region. The substrate surfacethat is not under the proximity process head is dry. Details of such aprocess and system can be found in U.S. application Ser. No. 10/607,611,titled “Apparatus And Method For Depositing And Planarizing Thin FilmsOf Semiconductor Wafers,” filed on Jun. 27, 2003, and U.S. applicationSer. No. 10/879,263, titled “Method and Apparatus For PlatingSemiconductor Wafers,” filed on Jun. 28, 2004, both of which areincorporated herein in their entireties.

The at least one transfer module 52 is configured for vacuum transfer ofthe substrate or controlled environment transfer of the substrate.Alternatively, the at least one transfer module 52 may comprise totransfer modules with one transfer module configured for vacuum transferand a second transfer module configured for controlled environmenttransfer. Transfer module 52 is coupled to the barrier deposition module58, barrier treatment module 60, ALD copper deposition module 62, andcopper gapfill module 65. Transfer module 52 is configured so that thesubstrate can be transferred between the modules substantially withoutexposure to an oxygen-containing environment or an oxide-formingenvironment.

Wet processes such as those performed in copper gapfill module 65typically operated near atmospheric pressure, while the dry processessuch as those performed in barrier deposition module 58, barriertreatment module 60, and ALD copper deposition module 62 are usuallyoperated at less than 1 Torr. Therefore, integrated system 50 needs tobe able to handle a mixture of dry and wet processes. The least onetransfer module 52 is equipped with one or more robots to move thesubstrate from one process area to another process area. The processarea could be a substrate cassette, a reactor, or a loadlock (cassetteand loadlock not shown in FIG. 3).

As described above, it is important to control the processing andtransport environments to minimize the exposure of the barrier layersurface to oxygen prior to deposition of the ALD copper layer so as toavoid formation of an oxide on the barrier layer. The substrate shouldbe process under a controlled environment, where the environment iseither under vacuum or filled with one or more inert gas(es) to limitthe exposure of the substrate to oxygen. To provide a controlledenvironment for substrate transfer, transfer module 52 is configured sothat the environment is controlled to be free of oxygen. In oneexemplary configuration, transfer module 52 is configured to have inertgas(es) fill the transfer module during substrate transfer.Additionally, all fluids used in the processes are de-gassed, i.e.dissolved oxygen is removed by commercially available degassing systems.Exemplary inert gas(es) includes nitrogen (N2), helium (He), neon (Ne),argon (Ar), krypton (Kr), and xenon (Xe).

Reference is now made to FIG. 4 where there is shown a schematic diagramof an exemplary integrated system 75, according to another embodiment ofthe present invention, for depositing a copper layer onto a transitionmetal barrier layer or transition metal compound barrier layer onsubstrates for integrated circuit metallization. Integrated system 75 isconfigured so as to produce a substantially oxygen free interfacebetween the barrier layer and the copper layer. A preferred embodimentof integrated system 75 is configured to substantially perform the stepsof process flow 22 (FIG. 2) and variations thereof or the steps ofprocess flow 22 (FIG. 2) and variations thereof.

Integrated system 75 comprises a vacuum transfer module 105 connectedwith a barrier deposition module 108, a loadlock 110, a barriertreatment module 113, and an ALD copper deposition module 117.Integrated system 75 also includes a controlled environment transfermodule 120 connected with a copper seed deposition module 128, and acopper gapfill module 130. A second loadlock 123 is included inintegrated system 75 for joining vacuum transfer module 105 and controlenvironment transfer module 120.

For integrated system 75, barrier deposition module 108 is configured soas to have essentially the same configuration as described above forbarrier deposition module 58. Barrier surface cleaning module 113 isconfigured so as to have essentially the same configuration as describedabove for barrier surface cleaning module 60. ALD copper depositionmodule 117 is configured to have essentially the same configuration asdescribed above for ALD copper deposition module 62. Loadlock 110 isprovided to allow substrate transfer for vacuum transfer module 105while maintaining vacuum conditions for vacuum transfer module 105.

Vacuum transfer module 105 is configured for operation under vacuum (<1Torr). Controlled environment transfer module 120 is configured foroperation at around 1 atmosphere pressure. Loadlock 123 is placedbetween vacuum transfer module 105 and controlled environment transfermodule 125 to allow substrate transfer between the two modules operatedunder different pressures while preserving the integrity of theenvironments in each transfer module. Loadlock 123 is configured to beoperated under vacuum at pressures less than 1 Torr, or at lab ambient,or to be filled with an inert gas selected form a group of inert gases.

Barrier treatment module 113 is configured to treat the surface of thebarrier layer after formation of the barrier layer. More specifically,barrier treatment module 113 is configured so as to prepare the surfaceof the barrier layer for follow-on processing steps. Primarily, barriertreatment module 113 is configured to improve the surface adhesion or toimprove the contact resistance for layers deposited on the barrierlayer. According to one embodiment of the present invention, barriertreatment module 113 includes a plasma chamber configured to subject thesurface of the barrier layer to a hydrogen containing plasma so as toremove contaminants on the surface of the barrier layer or decomposedmetal oxides formed on the surface of the barrier layer so as to producea metal rich surface at the surface of the barrier layer. As anotheroption, barrier treatment module 113 is configured to enrich the surfaceof the barrier layer with a metal such as by depositing the metal ontothe surface of the barrier layer. In a preferred configuration, barriertreatment module 113 includes a plasma chamber configured for plasmaimplantation of a metal. The implanted metal is incorporated with thesurface of the barrier layer to produce a metal rich surface for thebarrier layer.

ALD copper deposition module 117 is configured to deposit an ALD copperlayer under conditions that do not substantially cause oxide formationon a substantially oxide free barrier layer surface or metal enrichedbarrier layer surface. ALD copper deposition module 117 is configured todeposit a copper layer that is effective for substantially preventingoxidation of the barrier layer surface. More specifically, this meansthat ALD copper deposition module 117 is configured to deposit a copperlayer so as to substantially prevent oxidation of the barrier layerduring the deposition of the ALD copper layer. ALD copper depositionmodule 117 is configured to deposit an ALD copper layer that has asuitable combination of thickness and microstructure properties so thatdiffusion of oxide forming species to the surface of the barrier layersubstantially does not occur.

For a preferred embodiment of the present invention, ALD copperdeposition module 117 is configured to use chemistries that do notinclude elements or compounds that form a metal oxide with the metal atthe barrier layer surface. Exemplary ALD copper deposition processchemistries for which ALD copper deposition module 117 is configuredinclude, but are not limited to, ALD copper deposition from a precursorcopper compound such as (N,N′-diisopropylacetamidinato)copper(1) and ALDcopper deposition from a precursor copper compound such as(N,N′-di-sec-butylacetamidinato)copper(1).

Copper seed deposition module 128 is configured to deposit a conformalcopper seed layer on the ALD copper deposition layer. Preferably, copperseed deposition module 128 is configured for an electroless process toproduce the copper seed layer. Copper gapfill module 130 is configuredfor a thick copper gapfill process by an electroless deposition processor an electrochemical plating process. As stated above, electrolesscopper deposition and electrochemical plating are well-known wetprocesses. For a wet process to be integrated in a system withcontrolled processing and transporting environment, which has beendescribed above, the reactor needs to be integrated with a rinse/dryerto enable dry-in/dry-out process capability. In addition, the systemneeds to be filled with inert gas to ensure minimal exposure of thesubstrate to oxygen. Further, all fluids used in the process arede-gassed, i.e. dissolved oxygen is removed by commercially availabledegassing systems.

Wet processes such as those performed in copper seed deposition module128 and copper gapfill module 130 are typically operated nearatmospheric pressure, while the dry processes such as those performed inbarrier deposition module 108, ALD copper deposition module 117, andbarrier treatment module 113 are usually operated at less than 1 Torr.Therefore, integrated system 75 needs to be able to handle a mixture ofdry and wet processes. Vacuum transfer module 105 and controlledenvironment transfer module 120 are equipped with one or more robots tomove the substrate from one process area to another process area. Theprocess area could be a substrate cassette, a reactor, or a loadlock(cassette not shown in FIG. 4).

Reference is now made to FIG. 5 where there is shown a schematic diagramof an exemplary integrated system 75A, according to another embodimentof the present invention, for depositing a copper layer onto atransition metal barrier layer or transition metal compound barrierlayer on substrates for integrated circuit metallization. Integratedsystem 75A is configured so as to produce a substantially oxygen freeinterface between the barrier layer and the copper layer. A preferredembodiment of integrated system 75A is configured to substantiallyperform the steps of process flow 20 (FIG. 1) and variations thereof.

Integrated system 75A comprises a vacuum transfer module 105 connectedwith a barrier deposition module 108, a loadlock 110, a barriertreatment module 113, and an ALD copper deposition module 117.Integrated system 75A also includes a controlled environment transfermodule 120 connected with a copper gapfill module 130. A second loadlock123 is included in integrated system 75A for joining vacuum transfermodule 105 and control environment transfer module 120.

Integrated system 75A is essentially the same as integrated system 75described for FIG. 4 with the exception that integrated system 75A isconfigured so that ALD copper deposition module 117 produces an ALDcopper layer that is effective for preventing oxidation of theunderlying barrier layer and is also effective as a copper seed layer.This means that integrated system 75A does not require an electrolesscopper deposition module. Integrated system 75A is configured to depositthe gapfill copper layer onto the ALD copper layer.

Reference is now made to FIG. 6 where there is shown a schematic diagramof an exemplary integrated system 75B, according to another embodimentof the present invention, for depositing a copper layer onto atransition metal barrier layer or transition metal compound barrierlayer on substrates for integrated circuit metallization. Integratedsystem 75B is configured so as to produce a substantially oxygen freeinterface between the barrier layer and the copper layer. A preferredembodiment of integrated system 75B is configured to substantiallyperform the steps of process flow 22 (FIG. 2) and variations thereof.

Integrated system 75B comprises a vacuum transfer module 105 connectedwith a barrier deposition module 108, a loadlock 110, and an ALD copperdeposition module 117. Integrated system 75B also includes a controlledenvironment transfer module 120 connected with a copper seed depositionmodule 128, and a copper gapfill module 130. A second loadlock 123 isincluded in integrated system 75B for joining vacuum transfer module 105and control environment transfer module 120.

Integrated system 75B is essentially the same as integrated system 75described for FIG. 4 with the exception that integrated system 75B doesnot include a separate module to treat the barrier layer surface toremove oxide or metal enrich the surface. For some applications ofembodiments of the present invention, barrier layer treatment may not benecessary. Alternatively, further embodiments of the present inventionmay be configured so that the barrier layer can be treated in, as anexample, the barrier layer formation module or in, as another example,the ALD copper deposition module.

Reference is now made to FIG. 7 where there is shown a cross-sectionside view of a portion of copper metallization in an integrated circuit150 according to one embodiment of the present invention. Integratedcircuit 150 includes a semiconductor 155 with integrated circuitelements formed therein (circuit elements not shown in FIG. 7) and adielectric layer 160 on the semiconductor. The integrated circuitelements are electrically connected with metallization lines. Dielectric160 has a trench for containing the metallization lines. Integratedcircuit 150 further includes a barrier layer 165 lining the bottom andsides of the trench, an ALD copper layer 170 on barrier layer 165, acopper seed layer 175 on ALD copper layer 170, and a copper gapfilllayer 180 grown from copper seed layer 175 and completing the copperportion of the metallization. The top of the trench is sealed with asecond barrier layer 185 and more dielectric 190. Second barrier layer185 may be a selective metallic barrier layer such as a barrier layermade of tantalum, tantalum nitride, or a tantalum nitride and tantalumlayer combined, cobalt tungsten (CoW), cobalt tungsten borophosphide(CoWBP), and ruthenium. Alternatively, barrier layer 185 may be anelectrically insulating barrier material such as silicon carbide,silicon nitride or silicon carbonitride, or a hybrid of both selectivemetal barrier and non-selective dielectric barrier. Second dielectriclayer 190 may comprise the same material as dielectric 160 or it maycomprise a material different from dielectric 160.

Persons of ordinary skill in the art will know that seed layer 170 isoptional for embodiments of the present invention with a sufficientlythick ALD copper layer. More specifically, ALD copper layer 170 is madethick enough for some embodiments of the present invention to serve as aseed layer for electrochemical plating of copper gapfill layer 180.

Integrated circuit 150 includes a substantially oxide free interfacebetween barrier layer 165 and ALD copper layer 170. A preferredembodiment includes barrier layer 165 having a transition metal richsurface at the interface with ALD copper layer 170. The oxide freeinterface between barrier layer 165 and ALD copper layer 170 isaccomplished with ALD copper deposition process chemistries that do notuse oxygen or oxygen containing chemicals. Examples of two suitableprocess chemistries for deposition of ALD copper layer 170 were givenabove.

In the foregoing specification, the invention has been described withreference to specific embodiments. However, one of ordinary skill in theart appreciates that various modifications and changes can be madewithout departing from the scope of the present invention as set forthin the claims below. Accordingly, the specification and figures are tobe regarded in an illustrative rather than a restrictive sense, and allsuch modifications are intended to be included within the scope ofpresent invention.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any element(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature or element of any or all the claims.

As used herein, the terms “comprises,” “comprising,” “includes,”“including,” “has,” “having,” “at least one of,” or any other variationthereof, are intended to cover a non-exclusive inclusion. For example, aprocess, method, article, or apparatus that comprises a list of elementsis not necessarily limited only to those elements but may include otherelements not expressly listed or inherent to such process, method,article, or apparatus. Further, unless expressly stated to the contrary,“or” refers to an inclusive or and not to an exclusive or. For example,a condition A or B is satisfied by any one of the following: A is true(or present) and B is false (or not present), A is false (or notpresent) and B is true (or present), and both A and B are true (orpresent).

Further, unless expressly stated to the contrary, “at least one of” isto be interpreted to mean “one or more.” For example, a process, method,article, or apparatus that comprises one or more of a list of elementsand if one or more of the elements comprises a sub-list of sub-elements,then the sub-elements are to be considered in the same manner as theelements. For example, at least one of A and B is satisfied by any oneof the following: A is true (or present) and B is false (or notpresent), A is false (or not present) and B is true (or present), andboth A and B are true (or present).

1. A method of manufacturing a semiconductor device having coppermetallization and a transition metal barrier layer or transition metalcompound barrier layer so as to produce a substantially oxygen freeinterface between the barrier layer and the copper metallization, themethod comprising: (a) providing a substantially oxide free surface ofthe barrier layer; (b) depositing an amount of ALD copper onto the oxidefree surface of the barrier layer effective for preventing oxidation ofthe barrier layer; and (c) electroplating a gapfill copper layer ontothe amount of copper.
 2. The method of claim 1, further comprisingelectroless deposition of a copper seed layer onto the ALD copper, priorto electroplating the gapfill copper.
 3. The method of claim 1, furthercomprising a least one of:
 1. storing the substrate with the ALD copperfor an amount of time and
 2. transporting the substrate with the ALDcopper.
 4. The method of claim 1, wherein depositing the ALD copperexcludes oxygen compounds or oxygen.
 5. The method of claim 3, whereinstoring the substrate with the ALD copper for an amount of time andtransporting the substrate with the ALD copper occur in anoxygen-containing environment.
 6. The method of claim 3, wherein storingthe substrate with the ALD copper for an amount of time and transportingthe substrate with the ALD copper occur in a substantially non-oxygencontaining environment.
 7. The method of claim 1, wherein providing thesubstantially oxide free surface of the barrier layer includes atomiclayer deposition of the barrier layer.
 8. The method of claim 1, whereinproviding the substantially oxide free surface of the barrier layerincludes atomic layer deposition of tantalum or tantalum nitride.
 9. Themethod of claim 1, wherein providing the substantially oxide freesurface of the barrier layer includes atomic layer deposition oftantalum nitride and depositing the amount of ALD copper is accomplishedwith copper(I) 1,3-diketiminates,(N,N′-diisopropylacetamidinato)copper(1), or(N,N′-di-sec-butylacetamidinato)copper(1).
 10. The method of claim 1,wherein providing the substantially oxide free surface of the barrierlayer is accomplished by atomic layer deposition of tantalum nitride forthe barrier layer and treatment of the barrier layer surface in ahydrogen containing plasma.
 11. The method of claim 1, wherein providingthe substantially oxide free surface of the barrier layer isaccomplished by atomic layer deposition of tantalum nitride for thebarrier layer and treatment of the barrier layer surface in a hydrogencontaining plasma; the method further comprising electroless depositionof a copper seed layer onto the ALD copper.
 12. The method of claim 1,wherein providing the substantially oxide free surface of the barrierlayer includes enriching the surface of the barrier layer with atransition metal.
 13. The method of claim 1, wherein providing thesubstantially oxide free surface of the barrier layer includes enrichingthe surface of the barrier layer with tantalum.
 14. The method of claim1, wherein the barrier layer comprises tantalum or tantalum nitride.